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Microfabrication and characterization of gated amorphous diamond-based field emission electron sources
1Department of physics, Guangdong Province Key Lab of Display Material and Technology, and Institute of Condensed Matter Physics, Zhongshan University, Guangzhou, People's Republic of China. stsxns@zsu.edu.cn
Abstract:
Gated field emission electron sources of amorphous diamond (a-D) coated Si tips and a-D diodes on a rough Si substrate were studied, detailing the deposition and characterization of the thin film, the fabrication processes and the emission behavior of the electron sources. Mechanisms responsible for the emission process of the a-D coated devices are proposed. A comparison of the field emission performance of the two types of devices is presented. In addition, future improvements of the a-D diode on a rough Si cathode are discussed.