Related Experiment Video
Updated: Oct 3, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Measurement technique for the incident electron current in secondary electron detectors and its application in
T Agemura1, S Fukuhara, H Todokoro
1Beam Technology Center, Hitachi High-Technologies Corporation, Ibaraki, Japan. agemura-toshihide@naka.hitachi-hitec.com
Abstract:
A measurement technique for incident electron current in secondary electron (SE) detectors, especially the Everhart-Thornley (ET) detector, based on signal-to-noise ratio (SNR), which uses the histogram of a digital scanning electron microscope (SEM) image, is described. In this technique, primary electrons are directly incident on the ET detector. This technique for measuring the correlation between incident electron current and SNR is applicable to the other SE detectors. This correlation was applied to estimate the efficiency of the ET detector itself, to evaluate SEM image quality, and to measure the geometric SE collection efficiency and the SE yield. It was found that the geometric SE collection efficiency at each of the upper and lower detectors of a Hitachi S-4500 SEM was greater than 0.78 at all working distances.
Related Concept Videos
Scanning Electron Microscopy
Fundamental Principles
Accelerated...
Overview of Electron Microscopy
Overview of Microscopy Techniques
Transmission Electron Microscopy
Preparation of Samples for Electron Microscopy
Thomson's e/m Experiment
A particle with charge q, speed v, and mass m enters an area from the top, where the magnetic and electric fields are perpendicular both to the particle's motion and to one another. The magnetic...
