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Updated: Aug 8, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Effective mass anisotropy of gamma electrons in GaAs/AlGaAs quantum wells
1Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, United Kingdom.
Abstract:
Resonant magnetotunneling in GaAs/Al(0.28)Ga0.72As double barrier structures is used to demonstrate that the effective mass of confined Gamma conduction electrons becomes anisotropic when an electric field is applied perpendicular to the interfaces. Although several authors have previously reported Gamma-related optical anisotropy, this is the first example of a corresponding electrical anisotropy. The results are explained using a quantum mechanical model involving interface band mixing that contains additional features not found in the optical case.
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