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Atom lithography with a holographic light mask
M Mützel1, S Tandler, D Haubrich
1Institut für Angewandte Physik, Universität Bonn, Wegelerstrasse 8, D-53115 Bonn, Germany.
Abstract:
In atom lithography with optical masks, deposition of an atomic beam on a given substrate is controlled by a standing light-wave field. The lateral intensity distribution of the light field is transferred to the substrate with nanometer scale. We have tailored a complex pattern of this intensity distribution through diffraction of a laser beam from a hologram that is stored in a photorefractive crystal. This method can be extended to superpose 1000 or more laser beams. The method is furthermore applicable during growth processes and thus allows full 3D structuring of suitable materials with periodic and non-periodic patterns at nanometer scales.