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Growth of precursors in silicon using pseudopotential calculations
M P Chichkine1, M M De Souza, E M Sankara Narayanan
1Emerging Technologies Research Centre, De Montfort University, Leicester, LE1 9BH, United Kingdom.
Physical Review Letters
|February 28, 2002
Abstract:
Based on the results of pseudopotential calculations, the progression of a single interstitial into small compact clusters and ultimately into chain-like defects is examined. For clusters that consist of more than eight interstitials, the capture of bond-centered interstitials reveals a change in the growth mechanism leading to enhanced stability of clusters. The five-interstitial model is proposed to be a plausible candidate for optically active W centers, observed in ion irradiated silicon.