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Related Experiment Videos

Spatially-resolved EELS analysis of multilayer using EFTEM and STEM.

K Kimoto1, S Isakozawa, T Aoyama

  • 1Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki, Japan. kimoto.koji@nims.go.jp

Journal of Electron Microscopy
|March 29, 2002
PubMed
Summary
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This study compares scanning transmission electron microscopy (STEM) and energy-filtering transmission electron microscopy (EFTEM) for spatially-resolved electron energy-loss spectroscopy (EELS) in semiconductor devices. Both methods achieve sub-nanometre resolution but require managing beam damage for accurate analysis.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Surface Science

Background:

  • Multilayer semiconductor structures like SiO2/Si3N4/SiOxNy/Si are crucial in electronic devices.
  • Sub-nanometre depth profiling is essential for understanding device performance and failure mechanisms.

Purpose of the Study:

  • To compare the practical application of scanning transmission electron microscopy (STEM)-based and energy-filtering transmission electron microscopy (EFTEM)-based spatially-resolved electron energy-loss spectroscopy (EELS).
  • To evaluate the suitability of each technique for sub-nanometre depth profiling in multilayer semiconductor structures.

Main Methods:

  • Spatially-resolved electron energy-loss spectroscopy (EELS) was performed using both STEM and EFTEM techniques.
  • Analysis focused on depth profiling within a SiO2/Si3N4/SiOxNy/Si multilayer structure.

Related Experiment Videos

  • Comparison of elemental analysis capabilities and chemical shift/core loss intensity analysis.

    • Main Results:

    • STEM-based EELS excels at simultaneous multi-element analysis.
    • EFTEM-based EELS is optimal for single-element chemical shift and core loss intensity analysis.
    • Both techniques offer comparable sub-nanometre spatial resolution, with beam damage being a common concern.

    Conclusions:

    • Both STEM and EFTEM are viable for sub-nanometre EELS depth profiling in semiconductor multilayers.
    • Technique selection depends on whether multi-element or single-element chemical information is prioritized.
    • Minimizing beam damage through optimized current density (EFTEM) and beam overlap (STEM) is critical for reliable results.