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Ionization, electron attachment, and drift in CHF3.

J de Urquijo1, I Alvarez, C Cisneros

  • 1Centro de Ciencias Físicas, UNAM, P.O. Box 48-3, 62251 Cuernavaca, Morelos, México.

Physical Review. E, Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics
|April 24, 2002
PubMed
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Researchers measured electron behavior in CHF(3) using a pulsed Townsend technique. They found the effective ionization coefficient becomes zero at 66 Td, with electron attachment remaining constant at lower electric fields.

Area of Science:

  • Plasma physics
  • Gas discharge physics

Background:

  • Understanding electron transport properties in gases is crucial for various applications.
  • Trifluoromethane (CHF3) is a significant gas used in semiconductor manufacturing.

Purpose of the Study:

  • To measure the effective ionization coefficient and electron drift velocities in CHF(3).
  • To determine the critical electric field for the transition from ionization to attachment dominance.

Main Methods:

  • Pulsed Townsend technique was employed.
  • Measurements were conducted over a range of density-normalized electric field intensities (E/N) from 4 to 250 Townsend (Td).

Main Results:

  • The effective ionization coefficient was determined as a function of E/N.

Related Experiment Videos

  • An E/N value of 66 Td was estimated as the point where the effective ionization coefficient becomes zero.
  • Electron attachment coefficients were found to be constant for E/N < 20 Td, consistent with previous thermal energy measurements.

    • Conclusions:

    • The study provides key data on electron behavior in CHF(3) under varying electric fields.
    • The findings are relevant for optimizing processes involving CHF(3) in plasma applications.