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Related Experiment Videos

Fabry-perot-type antireflective coating for deep-ultraviolet binary photomask applications.

Hsuen-Li Chen1, Tieh-Chi Chu, Chien-Kui Hsu

  • 1National Nano Device Laboratory, Hsinchu, Taiwan. hlchen@ndl.gov.tw

Applied Optics
|July 9, 2002
PubMed
Summary

We developed a novel antireflective coating using a three-layer metal interference structure for deep-ultraviolet masks. This Fabry-Perot structure achieves less than 1.5% reflectance at critical wavelengths, enhancing mask performance.

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Area of Science:

  • Materials Science
  • Optics
  • Nanotechnology

Background:

  • Deep-ultraviolet (DUV) lithography masks require highly effective antireflective coatings to minimize light scattering and improve pattern fidelity.
  • Traditional antireflective layers face challenges in achieving ultra-low reflectance at multiple DUV wavelengths (e.g., 248 nm and 193 nm).

Purpose of the Study:

  • To design and demonstrate a novel antireflective coating structure for DUV binary masks.
  • To achieve ultra-low reflectance (<1.5%) at both 248 nm and 193 nm using a specific interference structure.

Main Methods:

  • Fabrication of a three-layer metal-oxide-metal stack, a type of Fabry-Perot interference structure.
  • Optimization of layer thicknesses (chrome, silicon oxide, top metal) to control optical properties.

Related Experiment Videos

  • Characterization of reflectance at key DUV wavelengths.

    • Main Results:

    • Achieved reflectance values below 1.5% at both 248 nm and 193 nm.
    • Demonstrated the role of the bottom chrome layer for absorption and the silicon oxide layer for wavelength tuning.
    • Confirmed the top metal layer's function in preventing charge accumulation during electron-beam writing.

    Conclusions:

    • The demonstrated three-layer Fabry-Perot antireflective coating is highly effective for DUV binary masks.
    • The structure offers tunable performance and addresses key challenges in DUV lithography, including reflectance and charge accumulation.