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Updated: Sep 30, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
High-contrast images of semiconductor sites via one-photon optical beam-induced current imaging and confocal
Vincent R Daria1, Jelda J Miranda, Caesar Saloma
1National Institute of Physics, University of the Philippines, Diliman, Quezon City.
Abstract:
We demonstrate a computationally efficient procedure for determining only the semiconductor sites in a confocal reflectance image of an integrated circuit. It utilizes a one-photon optical beam-induced current (1P-OBIC) and confocal reflectance images that are generated from the same focused excitation beam. A 1P-OBIC image is a two-dimensional map of the currents induced by the beam as it is scanned across the circuit surface. A 1P-OBIC is produced by an illuminated semiconductor material if the excitation photon energy exceeds the bandgap. The 1P-OBIC image has no vertical resolution because the 1P-OBIC is linear with the excitation beam intensity. The exclusive high-contrast image of semiconductor sites is generated by the product of the 1P-OBIC image and the confocal image. High-contrast images of the metal sites are also obtained by the product of the complementary OBIC image and the same confocal image.
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