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Related Experiment Videos

Spontaneous roughening: fundamental limits in Si(100) halogen etch processing.

Cari F Herrmann1, Dongxue Chen, John J Boland

  • 1Venable and Kenan Laboratories, Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, USA.

Physical Review Letters
|August 23, 2002
PubMed
Summary

Steric repulsion causes roughening on halogen-terminated silicon surfaces, limiting atomic-scale perfection in halogen etching processes, except for fluorine.

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Area of Science:

  • Surface science
  • Materials science
  • Computational chemistry

Background:

  • Halogen-terminated silicon surfaces are crucial in semiconductor fabrication.
  • Understanding their thermodynamic stability is key to controlling surface morphology.

Purpose of the Study:

  • To investigate the thermodynamic stability of halogen-terminated Si(100) surfaces.
  • To identify the factors influencing surface morphology during halogen etching.

Main Methods:

  • Dynamical scanning tunneling microscopy (STM) for real-space surface imaging.
  • Density functional theory (DFT) calculations for thermodynamic analysis.

Main Results:

  • Significant steric repulsion observed on all halogen-terminated Si(100) surfaces.

Related Experiment Videos

  • Roughening phenomenon driven by steric repulsion, favored for halogens other than fluorine.
  • Fluorine termination shows greater stability against roughening.

    • Conclusions:

    • Steric repulsion is a fundamental property dictating the stability of these surfaces.
    • Surface roughening is an intrinsic limitation for achieving atomic-scale perfection in halogen etching.
    • Fluorine etching offers a potential pathway for higher precision surface modification.