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A complementary-metal-oxide-semiconductor-field-effect-transistor-compatible atomic force microscopy tip fabrication
Mizuki Ono1, Dirk Lange, Oliver Brand
1Physical Electronics Laboratory, ETH Zurich, Hoenggerberg, Switzerland. m-ono@amc.toshiba.co.jp
Ultramicroscopy
|September 5, 2002
Summary
A new process enables fabricating atomic force microscopy cantilevers with integrated tips using complementary metal-oxide-semiconductor field-effect transistor (CMOS-FET) technology. This breakthrough allows for on-chip integration of sensors and actuators for enhanced AFM performance.
Area of Science:
- Nanotechnology
- Microfabrication
- Surface Science
Background:
- Atomic Force Microscopy (AFM) relies on specialized cantilevers with integrated tips for high-resolution imaging.
- Existing fabrication methods for AFM cantilevers often lack integration with standard microelectronic processes.
- On-chip integration of sensors and actuators can improve AFM performance and reduce system complexity.
Purpose of the Study:
- To develop a complementary metal-oxide-semiconductor-field-effect transistor (CMOS-FET) compatible process for fabricating AFM cantilevers with integrated tips.
- To enable tip fabrication after the main CMOS-FET process sequence.
- To integrate on-chip circuit components like piezoresistive sensors and actuators for enhanced functionality.
Main Methods:
- A novel CMOS-FET compatible fabrication process was developed.
- Tip fabrication was performed post-CMOS-FET sequence using low-temperature anisotropic silicon etching.
- Tetramethylammonium hydroxide (TMAH) solution was utilized for controlled anisotropic etching.
- On-chip components including piezoresistive deflection sensors, actuators, and amplifiers were integrated.
Main Results:
- Successfully fabricated CMOS-FET-based cantilevers with integrated tips and piezoresistive deflection sensors.
- Demonstrated the feasibility of fabricating tips after the standard CMOS-FET process.
- Achieved optimal performance of on-chip circuit components due to fabrication on a mirror-polished wafer surface.
- Recorded force-distance curves and constant-force mode scanning images, validating functionality.
Conclusions:
- The developed CMOS-FET compatible process enables the integrated fabrication of AFM cantilevers with tips and on-chip sensors.
- This approach offers a pathway for miniaturized, high-performance AFM systems.
- The post-CMOS-FET tip fabrication strategy ensures process compatibility and controllability.