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Updated: Jul 16, 2026

Liquid-cell Transmission Electron Microscopy for Tracking Self-assembly of Nanoparticles
Published on: October 16, 2017
High carrier mobility in single-crystal plasma-deposited diamond
Jan Isberg1, Johan Hammersberg, Erik Johansson
1ABB Group Services Center, Corporate Research, Nanotechnology and Innovative Materials Group, Västerås, Sweden. jan.isberg@angstrom.uu.se
Abstract:
Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determined by using the time-of-flight technique on thick, intrinsic, freestanding diamond plates and were verified by current-voltage measurements on p-i junction diodes. The improvement of the electronic properties of single-crystal diamond and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.
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