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Updated: Aug 7, 2026

Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies
Published on: December 18, 2015
Characterization of InAlAs/InGaAs/InP mid-infrared quantum cascade lasers
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, PR China. ygzhang@itsvr.sim.ac.cn
Abstract:
A mid-infrared laser characterization system, including a GPIB programmable I-P and I-V set-up based on direct waveform measurement with extraordinary wide pulse duration and duty cycle tuning range, in conjunction with a Fourier transform infrared spectroscopy system adapted with double modulation technique, has been developed. Based on this characterization system, the characteristics of gas source MBE grown InAlAs/InGaAs/InP quantum cascade lasers (QCL), especially their thermal property, have been evaluated. The results show that in the combination of I-P, I-V and spectral measurements at various driving pulse parameters, the thermal resistance, lasing conditions as well as spectral characteristics of the mid-infrared QCL could be deduced. This characterization system is also a useful tool for the evaluation of other types of diode lasers in the mid-infrared band.

