Related Experiment Video
Updated: Jul 15, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
The application of a hot deformation SEM stage, backscattered electron imaging and EBSD to the study of
Y Huang1, F J Humphreys, I Brough
1Manchester Materials Science Centre, Grosvenor Street, Manchester M1 7HS, UK. yan.huang@umist.ac.uk
Abstract:
The technique of combining in situ hot-deformation and high resolution electron backscattered diffraction (EBSD) has been applied to study the mechanisms operating during the thermomechanical processing of metals. A simple hot tensile-straining stage is installed in a field emission gun scanning electron microscope equipped with an EBSD system and has been used successfully for a number of preliminary investigations. These investigations include substructure formation, dynamic subgrain and grain growth, superplastic deformation in aluminium alloys, and dynamic recrystallization in copper. Despite the surface topography, which inevitably increases during plastic deformation, channelling contrast backscattered electron micrographs have been successfully obtained after strains of up to approximately 50%. Good quality EBSD maps have been obtained after strains of up to 100%. Most observations and measurements from the in situ experiments are consistent with what is known about the mechanisms occurring in the bulk. The microstructures revealed in the centre of the in situ samples after later repolishing are generally similar to those at the surface.
Related Concept Videos
Scanning Electron Microscopy
Fundamental Principles
Accelerated...
Preparation of Samples for Electron Microscopy

