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Updated: Sep 28, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Atomic configuration in core structure of Lomer dislocation in Si0.76Ge0.24/Si

D Wang1, H Chen, F H Li

  • 1Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing.

Ultramicroscopy
|November 12, 2002
PubMed

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