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Updated: Aug 13, 2026

Fabrication and Operation of an Oxygen Insert for Adherent Cellular Cultures
Published on: January 7, 2010
Mechanism of interstitial oxygen diffusion in hafnia
A S Foster1, A L Shluger, R M Nieminen
1Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, 02015, Finland.
Abstract:
We have performed density functional calculations of oxygen incorporation and diffusion in monoclinic hafnia (HfO2) for a range of oxygen charge states. The calculations demonstrate that oxygen favors atomic incorporation and that O2- is the most stable species. We find that oxygen interstitials diffuse via exchange with lattice oxygen sites in hafnia, and that O- species have the smallest diffusion barrier.
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