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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.

M S Munde1,2,3, A Mehonic4, W H Ng4

  • 1Department of Electrical & Electronic Engineering, University College London, Torrington Place, London, WC1E 7JE, UK. manveer.munde.13@ucl.ac.uk.

Scientific Reports
|August 26, 2017
PubMed
Summary

Rougher interfaces in amorphous silicon suboxide (a-SiOₓ) films improve resistance switching memory performance. This study highlights the importance of interface roughness and columnar microstructure for optimizing SiOx-based memory devices.

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