Electrostatic field enhancement of Al(111) oxidation

We show that the electrostatic charging of an aluminum oxide film by electron-bombardment produces a greatly enhanced rate of Al(111) oxidation by O2(g) at 90 K, compared to a film which has not been bombarded by electrons. This novel memory effect for prior electron irradiation is caused by the negative electrostatic potential created and stored on the outer oxide film surface as a result of electron bombardment. The high electrostatic field ( approximately 10(7) V/cm) produced across the depth of the film is postulated to cause an enhancement of ion migration through the film, leading to rapid oxide film growth, as predicted by the Cabrera-Mott theory of low temperature metal oxidation.