Artificial dielectric superlattices with broken inversion symmetry
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Updated: Sep 27, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Maitri P Warusawithana1, Eugene V Colla, J N Eckstein
1Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080, USA.
Abstract:
A variety of three-constituent superlattice patterns were made in atomic layer-by-layer films, with patterns breaking inversion symmetry giving effective permanent bias fields ranging up to about 200 kV/cm. Dielectric constants at room temperature were nearly 10(3), with loss tangents under 0.01. Most of the response came from discrete dipoles comprising multiple unit cells, but without any ferroelectric phase transition.
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