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A scheme for electrical detection of single-electron spin resonance
I Martin1, D Mozyrsky, H W Jiang
1Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
Physical Review Letters
|February 7, 2003
Summary
We demonstrate electrical detection of single-electron spin resonance near a field-effect transistor (FET). Electron spin changes modify trap charge, altering FET resistivity, enabling spin detection via RF field frequency sweeps.
Area of Science:
- Quantum electronics
- Solid-state physics
- Spin physics
Background:
- Single-electron spin manipulation is crucial for quantum computing.
- Electrical detection methods offer sensitive probes for quantum systems.
- Field-effect transistors (FETs) are versatile platforms for charge and spin detection.
Purpose of the Study:
- To investigate a novel scheme for electrical detection of single-electron spin resonance.
- To explore the relationship between electron spin dynamics and FET channel resistivity.
- To establish a method for probing electron spin states using readily available electronic measurements.
Main Methods:
- Utilizing a field-effect transistor (FET) with a shallow trap for single-electron confinement.
- Applying radiofrequency (rf) fields to induce resonant Rabi oscillations of the electron spin.
- Monitoring changes in FET channel resistivity as an indicator of spin state modulation.
Main Results:
- Resonant Rabi oscillations of the trapped electron spin were shown to modify the average charge of the trap.
- This modification in trap charge directly impacts the FET channel resistivity.
- The study observed distinct peaks or dips in channel resistivity at the Larmor frequency, corresponding to the electron spin resonance.
Conclusions:
- The proposed scheme enables electrical detection of single-electron spin resonance.
- FET channel resistivity serves as a sensitive readout for electron spin dynamics.
- This technique provides a pathway for non-invasive probing of quantum spin states.
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