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Microassembly of semiconductor three-dimensional photonic crystals
Kanna Aoki1, Hideki T Miyazaki, Hideki Hirayama
1Semiconductors Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan. kanna@iis.u-tokyo.ac.jp
Nature Materials
|March 4, 2003
Summary
Researchers developed a new semiconductor 3D photonic crystal fabrication technology. This method enables precise integration of photonic crystals for advanced optoelectronic devices operating at infrared wavelengths.
Area of Science:
- Materials Science and Engineering
- Optoelectronics
- Nanotechnology
Background:
- Semiconductor crystals form the basis of modern electronic devices with complex 3D structures.
- Photonic crystals, analogous to semiconductor crystals, require 3D architectures for successful optoelectronic device applications.
Purpose of the Study:
- To report a novel fabrication technology for semiconductor 3D photonic crystals.
- To enable the precise integration of these crystals for infrared wavelength applications.
Main Methods:
- Combined integrated circuit processing technology with micromanipulation.
- Fabricated multi-layered (four- to twenty-layered) photonic crystals with controlled defects.
- Achieved precise integration on-chip with structural errors less than 50 nm.
Main Results:
- Successfully fabricated semiconductor 3D photonic crystals for infrared wavelengths (3-4.5 microm).
- Numerical calculations confirmed a transmission peak due to resonant guided mode excitation in defective layers.
- Demonstrated precise integration of photonic crystals with controlled defects.
Conclusions:
- The developed fabrication technology is suitable for producing optical wavelength photonic crystal devices.
- This work provides new insights into the defective modes of 3D photonic crystals at short wavelengths.
- The technology holds significant potential for advancing optoelectronic device manufacturing.