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Related Experiment Videos

Energy-filtered scanning tunneling microscopy using a semiconductor tip.

P Sutter1, P Zahl, E Sutter

  • 1Department of Physics, Colorado School of Mines, Golden, Colorado 80401, USA.

Physical Review Letters
|May 7, 2003
PubMed
Summary
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State-specific imaging is achieved using indium arsenide (InAs) probe tips in scanning tunneling microscopy. This technique allows selective mapping of electronic states on silicon surfaces by filtering the tunneling current.

Area of Science:

  • Surface Science
  • Materials Science
  • Scanning Probe Microscopy

Background:

  • Scanning tunneling microscopy (STM) is a powerful tool for surface analysis.
  • Achieving electronic state-specific imaging in STM has been a long-standing challenge.
  • Conventional STM typically probes a convolution of available electronic states.

Purpose of the Study:

  • To demonstrate state-specific imaging using novel semiconductor probe tips.
  • To selectively map adatom and rest-atom dangling-bond states on Si(111)-(7 x 7).
  • To elucidate the mechanism behind state-selective imaging in STM.

Main Methods:

  • Utilized cleaved, [111]-oriented monocrystalline indium arsenide (InAs) probe tips.
  • Employed constant-current filled-state scanning tunneling microscopy.

Related Experiment Videos

  • Varied tip-sample bias to achieve energy filtering.

    • Main Results:

    • Successfully achieved state-specific imaging on Si(111)-(7 x 7) surfaces.
    • Demonstrated selective mapping of adatom and rest-atom dangling-bond states.
    • Confirmed that energy gaps in the InAs probe's band structure enable energy filtering.

    Conclusions:

    • Cleaved InAs probe tips enable unprecedented electronic state selectivity in STM.
    • The energy filtering mechanism relies on the projected bulk band structure of the semiconductor probe.
    • This technique opens new avenues for detailed surface electronic structure investigations.