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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Valley-selective carrier transfer in SnS-based van der Waals heterostructures.

E Sutter1, H-P Komsa2, P Sutter3

  • 1Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA. esutter@unl.edu.

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Summary

Valleytronics uses semiconductor valleys for information processing. SnS-based heterostructures demonstrate selective electron transfer between valleys for novel valley-selective readout, advancing semiconductor technology.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Valleytronics offers a promising alternative to conventional electronics by utilizing the valley degree of freedom in semiconductors.
  • Traditional valleytronic systems often rely on complex phenomena like the valley-Hall effect for readout.
  • Non-traditional systems with addressable, non-degenerate valleys present an opportunity for simplified valley manipulation and readout.

Purpose of the Study:

  • To explore the potential of non-traditional valleytronic systems using van der Waals (vdW) semiconductors.
  • To demonstrate valley-selective manipulation and readout in Sn(II) sulfide (SnS)-based heterostructures.
  • To investigate charge transfer mechanisms at vdW interfaces for controlling valley populations.

Main Methods:

  • Fabrication and characterization of SnS flakes and SnS-GeS vdW heterostructures.
  • Utilizing cathodoluminescence spectroscopy to probe valley-specific electronic properties.
  • Comparing luminescence intensity changes in SnS flakes versus heterostructures.

Main Results:

  • Observed a significant reversal in luminescence intensity between the X and Y valleys in SnS-GeS vdW stacks.
  • Demonstrated selective electron transfer from the Y-valley into GeS, while X-valley electrons remained in SnS.
  • Confirmed that heterostructure band offsets can control valley population dynamics.

Conclusions:

  • SnS-based vdW heterostructures enable a novel approach to valleytronics.
  • Selective charge transfer at interfaces provides a mechanism for valley-selective readout.
  • This work highlights the potential of non-traditional valleytronic systems and semiconductor interface engineering for future information processing technologies.