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Updated: Aug 9, 2026
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 2, 2013
Near-field observation of carrier diffusion in GaAs quantum structures under high magnetic fields
T Tokizaki1, T Onuki, T Tsuchiya
1Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan. t-tokizaki@aist.go.jp
Abstract:
Photoluminescence from a two-dimensional electron-gas system in GaAs single hetero-structures was investigated using a scanning near-field optical microscope (SNOM) operated at cryogenic temperatures under high magnetic fields. The local intensity of the luminescence increased 600-fold that at 0 T as the magnetic field was increased up to 6 T. The enhancement depended on the spatial resolution of the SNOM. These characteristics are explained by the suppression of the diffusion of photocarriers caused by the Lorentz force in magnetic fields.
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