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Voltage-controlled spin selection in a magnetic resonant tunneling diode
A Slobodskyy1, C Gould, T Slobodskyy
1Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
Physical Review Letters
|July 15, 2003
Summary
We fabricated novel semiconductor diodes using a (Zn,Mn,Be)Se system. Applying a magnetic field split the resonance, demonstrating spin-polarized electron tunneling for potential spin filters.
Area of Science:
- Semiconductor physics
- Spintronics
- Materials science
Background:
- Resonant tunneling diodes (RTDs) are crucial for high-frequency electronics.
- Dilute magnetic semiconductors offer unique spin-dependent properties.
- Controlling electron spin in quantum wells is key for spintronic devices.
Purpose of the Study:
- To fabricate and characterize all II-VI semiconductor resonant tunneling diodes (RTDs).
- To investigate the effect of magnetic fields on the quantum well energy levels and transport properties.
- To explore the potential of these devices as voltage-controlled spin filters.
Main Methods:
- Fabrication of (Zn,Mn,Be)Se based RTDs.
- Measurement of current-voltage characteristics under varying magnetic fields.
- Analysis of spin splitting in quantum well energy levels.
Main Results:
- Successful fabrication of all II-VI semiconductor RTDs.
- Observed splitting of transmission resonance peaks under an external magnetic field.
- Demonstrated tunneling transport through spin-polarized levels.
Conclusions:
- The observed phenomena provide evidence for spin-polarized tunneling in (Zn,Mn,Be)Se RTDs.
- These findings represent a significant step towards developing voltage-controlled spin filters.
- The (Zn,Mn,Be)Se material system shows promise for spintronic applications.