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Related Experiment Videos

Imaging individual atoms inside crystals with ADF-STEM.

P M Voyles1, J L Grazul, D A Muller

  • 1Bell Laboratories, Lucent Technologies, 700 Mountain Ave, Rm 1D-437, Murray Hill, NJ 07974-0636, USA. voyles@engr.wisc.edu

Ultramicroscopy
|July 23, 2003
PubMed
Summary

Quantitative imaging of individual impurity atoms using annular dark-field scanning transmission electron microscopy (ADF-STEM) is possible with thin samples. This study reveals the primary nanocluster defect causing electrical inactivity in antimony-doped silicon consists of only two atoms.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Quantitative imaging of individual impurity atoms is crucial for understanding material properties.
  • Annular dark-field scanning transmission electron microscopy (ADF-STEM) offers high-resolution imaging capabilities.
  • Interpreting ADF-STEM images requires a deep understanding of imaging theory and sample preparation.

Purpose of the Study:

  • To explore the theoretical basis of ADF-STEM lattice imaging for individual impurity atoms.
  • To develop and apply techniques for preparing ultra-thin, high-quality samples for imaging.
  • To quantitatively analyze ADF-STEM images to determine the structure of defects responsible for electrical inactivity.

Main Methods:

  • Plane-wave multislice simulations were used to model ADF-STEM image intensity.

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  • A wedge mechanical polishing technique was employed to create samples less than 50 Å thick.
  • Advanced image analysis techniques were applied to extract quantitative information.

    • Main Results:

    • Simulations showed depth-dependent image intensity for substitutional impurities due to probe channeling.
    • Interstitial impurity intensity was found to be less depth-dependent.
    • Ultra-thin samples (<50 Å) with low surface roughness and no amorphous oxide were successfully prepared.

    Conclusions:

    • Direct interpretation of ADF-STEM images is feasible in ultra-thin samples.
    • The primary nanocluster defect responsible for the electrical inactivity of antimony in silicon at high concentrations comprises only two atoms.