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Perpendicular interlayer coupling in Ni80Fe20/NiO/Co trilayers.

J Camarero1, Y Pennec, J Vogel

  • 1Laboratoire Louis Néel, CNRS, BP166, 38042 Grenoble Cedex, France. julio.camarero@uam.es

Physical Review Letters
|August 9, 2003
PubMed
Summary
This summary is machine-generated.

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A perpendicular magnetic coupling was discovered between nickel-iron (NiFe) and cobalt (Co) layers in NiFe/NiO/Co trilayers. This coupling strength, influenced by nickel oxide (NiO) thickness, impacts magnetic properties like coercive field.

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Magnetism

Background:

  • Understanding magnetic coupling in thin-film heterostructures is crucial for developing advanced magnetic devices.
  • Perpendicular magnetic coupling offers unique properties for spintronic applications.

Purpose of the Study:

  • To investigate the in-plane perpendicular magnetic coupling between NiFe and Co layers in NiFe/NiO/Co trilayers.
  • To determine the influence of NiO layer thickness on the magnetic coupling and properties.

Main Methods:

  • Magneto-optical Kerr effect (MOKE) measurements.
  • X-ray magnetic circular dichroism (XMCD) measurements.
  • Numerical simulations incorporating interface roughness and NiO anisotropy.

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Main Results:

  • An in-plane perpendicular magnetic coupling was observed for NiO thicknesses from 4 to 25 nm.
  • The coercive field of the Co layer increased with NiO thickness, exceeding that of NiO/Co bilayers.
  • The saturation field of the NiFe layer decreased with increasing NiO thickness, indicating coupling weakening.
  • Numerical simulations supported the coupling mechanism involving interface roughness and NiO anisotropy.

Conclusions:

  • The study confirms perpendicular magnetic coupling in NiFe/NiO/Co trilayers, dependent on NiO thickness.
  • Interface roughness and NiO anisotropy are key factors in establishing the observed 90-degree coupling.
  • Findings provide insights into controlling magnetic interactions in multilayer systems for potential device applications.