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Published on: July 22, 2013
Lateral scaling in carbon-nanotube field-effect transistors
S J Wind1, J Appenzeller, Ph Avouris
1IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA.
Physical Review Letters
|August 9, 2003
Summary
We fabricated carbon-nanotube field-effect transistors with multiple gates. Different switching behaviors suggest Schottky-barrier modulation versus bulk switching, with evidence for ballistic transport in nanotubes.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Carbon nanotubes (CNTs) are promising materials for next-generation electronics due to their unique electrical properties.
- Field-effect transistors (FETs) are fundamental building blocks in electronic circuits.
- Controlling charge transport in CNTs is crucial for device performance.
Purpose of the Study:
- To investigate the impact of segmented gates on carbon-nanotube field-effect transistor (CNFET) characteristics.
- To differentiate between contact modulation (Schottky-barrier) and bulk switching mechanisms in CNFETs.
- To provide evidence for ballistic transport in semiconducting carbon nanotubes.
Main Methods:
- Fabrication of CNFETs with multiple, individually addressable gate segments.
- Characterization of transistor performance under different gate switching conditions.
- Analysis of current-voltage characteristics to determine transport mechanisms.
Main Results:
- CNFETs exhibited distinct electrical behaviors when switching interior gates versus source/drain-adjacent gates.
- The observed differences were attributed to a transition from Schottky-barrier modulation at contacts to bulk switching.
- Current in the bulk region was found to be independent of gate length, indicating ballistic transport over hundreds of nanometers.
Conclusions:
- Segmented gates offer a method to control and probe different transport regimes in CNFETs.
- Ballistic transport is achievable in semiconducting carbon nanotubes over significant lengths.
- Understanding these transport mechanisms is key for optimizing CNT-based electronic devices.
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