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Updated: Mar 11, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure
M R Müller1,2,3, R Salazar4, S Fathipour5
1Intelligent Microsystems Chair, TU Dortmund, Emil-Figge-Str. 68, 44227, Dortmund, Germany.
Abstract:
In the present paper, we show tungsten diselenide (WSe2) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe2 flake are adjusted, using buried triple-gate substrates with three independently controllable gates. The device characteristics found in the tunnel transistor configuration are determined by the particular geometry of the buried triple-gate structure, consistent with a simple estimation of the expected off-state behavior.
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