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Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure.

M R Müller1,2,3, R Salazar4, S Fathipour5

  • 1Intelligent Microsystems Chair, TU Dortmund, Emil-Figge-Str. 68, 44227, Dortmund, Germany.

Nanoscale Research Letters
|November 24, 2016
PubMed
Summary
This summary is machine-generated.

Tungsten diselenide (WSe2) devices were engineered to function as n-type, p-type field-effect transistors (FETs), and tunnel transistors. This tunability was achieved using novel buried triple-gate substrates for versatile electronic applications.

Keywords:
Electrostatic dopingReconfigurable deviceTungsten diselenide (WSe2)

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Tungsten diselenide (WSe2) is a promising 2D material with unique electronic properties.
  • Developing multifunctional electronic devices from single material flakes is a key research goal.

Purpose of the Study:

  • To demonstrate tunable electronic device functionalities on a single tungsten diselenide (WSe2) flake.
  • To investigate the role of device geometry in controlling transistor behavior.

Main Methods:

  • Fabrication of WSe2 devices using buried triple-gate substrates with independently controllable gates.
  • Tuning of source, channel, and drain areas to modify device characteristics.
  • Characterization of field-effect transistor (FET) and band-to-band tunnel transistor (TFET) behaviors.

Main Results:

  • Successfully demonstrated WSe2 devices operating as both n-type and p-type FETs and band-to-band tunnel transistors on the same flake.
  • Device characteristics, particularly in the tunnel transistor configuration, were found to be dependent on the specific geometry of the triple-gate structure.
  • Observed off-state behavior in tunnel transistors consistent with theoretical estimations based on device geometry.

Conclusions:

  • The presented triple-gate architecture enables versatile device operation from a single WSe2 flake.
  • Device geometry plays a critical role in determining the performance of WSe2-based tunnel transistors.
  • This work paves the way for complex integrated circuits using 2D materials.