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Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

Zhaohao Zhang1,2,3, Yudong Li1,2,3, Jing Xu1,2,3

  • 1Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing, China.

Nanoscale Research Letters
|December 15, 2022
PubMed

Keywords:
Back gateDomain switchingETSOIHf0.5Zr0.5O2Subthreshold swing

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