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Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs.

Zhaohao Zhang^1,2,3, Yudong Li^1,2,3, Jing Xu^1,2,3

¹Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing, China.

Nanoscale Research Letters

|December 15, 2022

Summary

Extremely thin silicon-on-insulator field-effect transistors (ETSOI FETs) using ferroelectric layers achieve ultra-steep subthreshold swing. This demonstrates their potential for dynamic threshold adjustment in ultra-low-power electronics.

Keywords:

Back gate Domain switching ETSOI Hf0.5Zr0.5O2 Subthreshold swing

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Published on: October 23, 2018

Area of Science:

Semiconductor device physics
Materials science

Background:

Ferroelectric materials offer unique electrical properties for advanced transistors.
Extremely thin silicon-on-insulator (ETSOI) technology enables miniaturization and improved performance.
Achieving steep subthreshold swing is crucial for reducing power consumption in electronic devices.

Purpose of the Study:

To fabricate and characterize extremely thin silicon-on-insulator field-effect transistors (ETSOI FETs) incorporating an ultra-thin ferroelectric layer.
To investigate the subthreshold characteristics of these devices under double-gate modulation.
To demonstrate a model for understanding and controlling the subthreshold swing behavior.

Main Methods:

Fabrication of ETSOI FETs with a 3 nm ferroelectric (FE) hafnium zirconium oxide (Hf_0.5Zr_0.5O₂) layer.
Extensive investigation of subthreshold characteristics using double-gate modulation.
Development of an analytical model based on the transient Miller model.

Main Results:

The minimum subthreshold swing (SS) of a 40 nm ETSOI device was adjustable from 80.8 to 50 mV/dec.
Demonstrated ultra-steep SS characteristics due to back-gate voltage coupling effects.
Validated an analytical model for explaining the observed electrical characteristics.

Conclusions:

The developed FE ETSOI FETs exhibit promising ultra-steep subthreshold swing.
The devices show feasibility for ultra-low-power applications through dynamic threshold adjustment.
This research contributes to the advancement of energy-efficient semiconductor devices.