A multi-nano-dot circuit and structure using thermal-noise-assisted tunneling for stochastic associative processing

The single-electron circuit and nanostructure described in this paper are designed for stochastic associative processing, which is an expanded version of ordinary associative memory processing. In stochastic associative processing, the association probability of each stored pattern depends on the similarity between the stored pattern and the input pattern. Such unique processing is useful for sequential stochastic association and for clustering for vector quantization. Conventional single-electron circuits operate only at very low temperature for practical junction capacitance (i.e., 30 K for 0.1 aF) because the charging energy in these circuits is directly related to the tunnel junction capacitance. Our multi-nano-dot circuit and structure operate at room temperature with a junction capacitance around 0.1 aF through tunneling processes assisted by thermal noise. We analyze the operation of this circuit in detail and propose for it a stochastic associative processing operation, where the detection timing of the electron position controls the association probability distribution.