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Nanoscale magnetic regions formed in GaN implanted with Mn
N Theodoropoulou1, K P Lee, M E Overberg
1Department of Physics, University of Florida, Gainesville, Florida 32611, USA.
Journal of Nanoscience and Nanotechnology
|August 14, 2003
Abstract:
Platelet structures with diameters less than 250 A and hexagonal symmetry were formed in GaN by high dose Mn+ ion implantation and annealing at 700-1000 degrees C. Selected-area diffraction pattern analysis indicates that these regions are GaxMn1-xN with a different lattice constant to the host GaN. The presence of the GaMnN corresponds to ferromagnetic behavior of the samples with a Curie temperature of approximately 250 K.