[Photoluminescence spectrum of oxygen and nitrogen-doped Si-based film]

O and N-doped amorphous Si-based films were prepared by magnetron sputtering. The photoluminescence (PL) spectra from the films were measured. A series of intense PL bands located in red, green, blue, violet and ultraviolet regions were observed, whose intensities were affected by the contents of O and N and the temperature of the substrate (Ts) during deposition. Experimental results indicate that the red PL consists of wide band, which originates from quantum confinement effect, and the distinguishable peaks are related to O impurities. The green PL, which depends on N impurities, results from N defect level, and the type and position of its peaks are affected by Ts during deposition. The blue PL containing distinguishable peaks is related to complex O defect levels. The violet PL is composed of wide bands and a double peaks, and its PL intensity is influenced by the kind and content of impurity and Ts. In summary, the intense green and violet PL can be obtained when Ts during deposition is 750 degrees C and the contents of O and N impurities are moderate.