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Electric field effect in correlated oxide systems.

C H Ahn¹, J-M Triscone, J Mannhart

¹Department of Applied Physics, Yale University, PO Box 208284, New Haven, Connecticut 06520-8284, USA. charles.ahn@yale.edu

|August 29, 2003

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Field-effect transistors are key in electronics. Applying this approach to new materials allows tuning of exotic electronic behaviors like superconductivity and colossal magnetoresistance.

Area of Science:

Condensed matter physics
Materials science

Background:

Semiconducting field-effect transistors (FETs) are fundamental to modern electronics.
Novel applications of FETs extend beyond semiconductors to modulate correlated electron systems.

Purpose of the Study:

To provide an overview of achievements in applying the field-effect approach to correlated electron systems.
To discuss the opportunities presented by this approach for tuning material properties.

Main Methods:

Review of existing research on field-effect modulation of correlated materials.
Analysis of experimental techniques enabling electrostatic control over electronic phases.

Main Results:

Demonstration of electrostatic control over high-temperature superconductivity.

Related Experiment Videos

Evidence of tuning colossal magnetoresistance effects via field-effect gating.

Potential for phase transition manipulation in correlated systems.

Conclusions:

The field-effect approach offers a powerful tool for exploring and controlling complex electronic states.
This methodology opens new avenues for designing materials with tailored quantum properties.