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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 2, 2013
Two carriers in vertically coupled quantum dots: magnetic field effect
1Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Tunis, Tunisia.
Abstract:
We study a two-charge-carrier (two holes or two electrons) quantum dot molecule in a magnetic field. In comparison with the electron states in the double quantum dot, the switching between the hole states is achieved by changing both the inter-dot distance and magnetic field. We use harmonic potentials to model the confining of two charge carriers and calculate the energy difference delta E between the two lowest energy states with the Hund-Mulliken technique, including the Coulomb interaction. Introducing the Zeeman effect, we note a ground-state crossing, which can be observed as a pronounced jump in the magnetization at a perpendicular magnetic field of a few Tesla. The ground states of the molecule provide a possible realization for a quantum gate.
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