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Updated: Aug 14, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 3, 2013
Atomically precise placement of single dopants in si
S R Schofield1, N J Curson, M Y Simmons
1Centre for Quantum Computer Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia. steven@phys.unsw.edu.au
Abstract:
We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with approximately 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.
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