Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

Electrically deactivating nearest-neighbor donor-pair defects in Si.

Yong-Sung Kim1, Eun-Cheol Lee, K J Chang

  • 1Department of Physics, Korea Advanced Institute of Science and Technology, Daejon 305-701, Korea.

Physical Review Letters
|October 4, 2003
PubMed
Summary
This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Extracellular Vesicle-embedded alginate hydrogel patch for accelerated wound healing.

Materials today. Bio·2026
Same author

Nanoparticle-enabled tuning of cell density for enhanced adhesion and tissue repair.

Nature communications·2026
Same author

Synergistic Ion-Releasing Nanoparticles as a Therapeutic Platform for Modulating Adult Stem Cell Activity in Wound Healing.

Biomaterials research·2025
Same author

Engineering IgG antibodies for intracellular targeting and drug delivery.

Journal of controlled release : official journal of the Controlled Release Society·2025
Same author

Multidimensional nanofibrous hydrogels integrated triculture system for advanced myocardial regeneration.

Biofabrication·2024
Same author

Ionic Liquid-Based Hybrid Gel Microcolumns for Enhanced Narcotic Detection in Portable Micro-Gas Chromatography.

ACS applied materials & interfaces·2024

Nearest-neighbor donor pairs in silicon (Si) become energetically favorable at high doping levels. These electrically inactive pairs, formed by dopant atoms, explain the observed carrier saturation in n-type silicon.

Area of Science:

  • Solid State Physics
  • Materials Science
  • Computational Materials Science

Background:

  • Understanding dopant behavior in silicon (Si) is crucial for semiconductor device performance.
  • High doping levels in n-type Si can lead to phenomena like carrier saturation, limiting device efficiency.
  • The atomic configurations and electronic properties of dopant clusters are not fully understood.

Purpose of the Study:

  • To investigate the energetic stability and electronic properties of nearest-neighbor donor pairs in highly n-type silicon.
  • To identify specific dopant configurations responsible for electrical inactivity at high doping concentrations.
  • To provide a theoretical explanation for the observed carrier saturation in doped silicon.

Main Methods:

  • First-principles density-functional calculations were employed.

Related Experiment Videos

  • The study focused on nearest-neighbor dopant pairs in silicon.
  • Energetic stability and defect levels of various configurations were computed.

    • Main Results:

    • A class of energetically favorable nearest-neighbor donor pairs in n-type Si was identified.
    • Two configurations were proposed: fourfold coordinated and threefold coordinated (via bond-breaking).
    • For P and As, the energy difference between states is < 0.1 eV; for Sb, the threefold state is more stable by 0.24 eV.
    • The fourfold coordinated state has a deep donor level near the valence band maximum; the threefold state's level is deep within the valence band.

    Conclusions:

    • Both proposed donor pair configurations are electrically inactive at very high doping levels.
    • These inactive donor pairs are suggested to be the cause of carrier saturation in highly n-type silicon.
    • The findings offer insights into dopant behavior and defect physics in heavily doped semiconductors.