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Updated: Aug 15, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon
V S Khrapai1, A A Shashkin, V T Dolgopolov
1Institute of Solid State Physics, Chernogolovka, Moscow District 142432, Russia.
Abstract:
Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron gaps. The data yield an effective g factor that is close to its value in bulk silicon and does not depend on the filling factor. The cyclotron splitting corresponds to the effective mass that is strongly enhanced at low electron densities.
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