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Updated: Aug 30, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
(2 x 1)-(1 x 1) phase transition on Ge(001): dimer breakup and surface roughening
Esther van Vroonhoven1, Harold J W Zandvliet, Bene Poelsema
1Solid State Physics Group, MESA+ Research Institute, University of Twente, PO Box 217, Enschede, The Netherlands.
Abstract:
Using low energy electron microscopy, we have investigated the (2 x 1)-(1 x 1) phase transition occurring above 925 K on Ge(001). Dimer breakup has been identified as the physical origin of this transition. A quantitative description of the dimer concentration during the transition involves configuration entropy of random monomers within the dimer matrix. The dimer formation energy amounts to 1.2+/-0.3 eV. Dimer breakup promotes reversible surface disorder by step proliferation and irreversible surface roughening above 1130 K.
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