Coherent backscattering near the two-dimensional metal-insulator transition
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Updated: Aug 15, 2026

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers
Published on: October 5, 2013
Maryam Rahimi1, S Anissimova, M R Sakr
1Physics Department, Northeastern University, Boston, Massachusetts 02115, USA.
Abstract:
We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field.
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