CBED and LACBED: characterization of antiphase boundaries
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Updated: Aug 30, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
J P Morniroli1, M L Nó, P P Rodríguez
1UMR CNRS 8517, Université des Sciences et Technologies de Lille et Ecole Nationale Supérieure de Chimie de Lille, Cité Scientifique, 59655 d'Ascq Cédex, Villeneuve, France. jean-paul.morniroli@univ.lille.fr
Abstract:
Convergent-beam electron diffraction (CBED) and large-angle convergent-beam electron diffraction (LACBED) techniques are well adapted to the characterization of several types of crystal defects. In fact, dislocations, grain boundaries and stacking faults have already been successfully characterized with these methods. In the present paper, we describe the CBED and LACBED characterization of another type of crystal defect showing a special interest in materials science: antiphase boundaries (APBs). The first part of the paper is devoted to the determination of the effects of antiphase boundaries on CBED and LACBED patterns that could be expected from a theoretical point of view. It indicates that the superlattice excess lines present on these patterns are split into two lines with equal intensity when the incident beam is located on an APB. In the second part, we experimentally test these theoretical predictions on a specimen showing two different known types of antiphase boundaries. In a third part we indicate how these methods could be used to identify unknown APBs in a specimen. Finally, the advantages and disadvantages of both methods for the characterization of antiphase boundaries are discussed.
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