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Novel germanium-based magnetic semiconductors.

F Tsui1, L He, L Ma

  • 1Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599, USA. ftsui@physics.unc.edu

Physical Review Letters
|November 13, 2003
PubMed
Summary

Researchers developed novel cobalt (Co) and manganese (Mn)-doped germanium (Ge) magnetic semiconductors. These materials exhibit high Curie temperatures (T(C)) and significant magnetoresistance, controllable via doping concentration.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Semiconductor Spintronics

Background:

  • Germanium (Ge) is a foundational semiconductor material.
  • Magnetic semiconductors offer potential for integrated spintronic devices.
  • Achieving high Curie temperatures (T(C)) in semiconductor systems remains a challenge.

Purpose of the Study:

  • To investigate the epitaxial synthesis of novel Co and Mn-doped Ge magnetic semiconductors.
  • To explore the magnetic and transport properties of these doped materials.
  • To determine the influence of doping concentration on T(C) and magnetoresistance.

Main Methods:

  • Epitaxial growth techniques were employed to create high-quality thin films.
  • Co and Mn were used as dopants to induce magnetic properties in Ge.

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  • Systematic variation of doping concentrations was performed.

    • Main Results:

    • High-quality epitaxial films with high doping concentrations were successfully stabilized.
    • The Co and Mn-doped Ge system exhibited high T(C) values.
    • Significant magnetoresistance effects were observed and found to be controllable.
    • A maximum T(C) of approximately 270 K was achieved at a composition of Co0.12Mn0.03Ge0.85.

    Conclusions:

    • Co and Mn co-doping is an effective strategy for creating high-quality magnetic semiconductor films based on Ge.
    • The developed materials demonstrate promising magnetic and transport properties for spintronic applications.
    • Systematic control over magnetic and transport characteristics is achievable through doping concentration adjustments.