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Excitonic absorption above the Mott transition in Si
P Grivickas1, V Grivickas, J Linnros
1Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, SE-164 40 Stockholm, Sweden.
Physical Review Letters
|December 20, 2003
Abstract:
We present experimental evidence for the existence of excitonic states above the excitonic Mott transition in both highly doped and highly excited silicon. Previous limitations to resolve the fundamental absorption edge of Si at dense carrier plasmas are overcome employing a novel spatially and time-resolved spectroscopy. We show that the obtained density dependent excess absorption at 75 K represents an excitonic enhancement effect, which is attributed to persisting many-body interactions.