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Related Experiment Videos

Integrated color pixels in 0.18-microm complementary metal oxide semiconductor technology.

Peter B Catrysse1, Brian A Wandell

  • 1Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA. pcatryss@stanford.edu

Journal of the Optical Society of America. A, Optics, Image Science, and Vision
|December 23, 2003
PubMed
Summary

Researchers developed novel integrated color pixels using patterned metal layers in complementary metal oxide semiconductor (CMOS) image sensors. These metal layers demonstrate wavelength selectivity, enabling color filtering directly within pixels for advanced imaging applications.

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Area of Science:

  • Optoelectronics
  • Semiconductor device physics
  • Nanophotonics

Background:

  • Complementary metal-oxide-semiconductor (CMOS) image sensors are increasingly integrated with advanced functionalities.
  • Implementing on-chip light filters is crucial for enhancing spectral selectivity and color imaging capabilities.

Purpose of the Study:

  • To explore the feasibility of using patterned metal layers as integrated light filters within CMOS image sensor pixels.
  • To demonstrate wavelength selectivity and color filtering capabilities of these patterned metal layers.

Main Methods:

  • Designed and prototyped integrated color pixels using a standard 0.18-micrometer CMOS technology.
  • Fabricated one-dimensional (1D) and two-dimensional (2D) patterned metal layers on top of photodetectors.

Related Experiment Videos

  • Measured transmittance spectra of patterned metal layers under various illumination conditions.
  • Performed wave optics and 2D finite-difference time-domain (FDTD) electromagnetic simulations to predict optical performance.

    • Main Results:

    • Patterned metal layers exhibited significant wavelength selectivity in the visible spectrum.
    • Experimental transmittance measurements showed good agreement with simulation predictions.
    • Simulations confirmed the potential for more complex designs to achieve desired spectral responses.

    Conclusions:

    • Patterned metal layers are a viable approach for creating integrated color filters in CMOS image sensors.
    • This technology offers a pathway to enhanced spectral resolution and miniaturization in imaging devices.
    • Further simulations indicate potential for optimizing designs for specific spectral filtering applications.