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InP sample preparation for the TEM by photochemical etching, ion milling, and chemical thinning
1Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario, Canada.
Microscopy Research and Technique
|November 1, 1992
Abstract:
Photochemical etching (PCE) as a method for preparation of InP semiconductor plan view samples for the transmission electron microscope is demonstrated and compared to the methods of ion milling and chemical thinning. PCE can produce small area samples for TEM analysis quickly and accurately. Also, the resulting thin regions are surrounded by a built-in stabilizing structure that improves handleability and reduces the occurrence of handling induced fracture.