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Tunneling versus thermionic emission in one-dimensional semiconductors
J Appenzeller1, M Radosavljević, J Knoch
1IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA.
Physical Review Letters
|March 6, 2004
Summary
This study examines how metal contacts and Schottky barriers affect nanotransistor switching. We explore charge injection mechanisms and a new method to determine barrier height for improved transistor performance.
Area of Science:
- Solid State Physics
- Materials Science
- Electrical Engineering
Background:
- Understanding charge injection is crucial for optimizing semiconductor device performance.
- Schottky barriers at metal-semiconductor interfaces significantly influence transistor switching characteristics.
- Nanoscale transistors present unique challenges due to increased contact effects.
Purpose of the Study:
- To investigate the role of contacts and Schottky barriers in nanotransistor switching.
- To analyze the mechanisms of charge injection from 3D metals into low-dimensional semiconductors.
- To introduce a novel method for determining the presence and height of Schottky barriers.
Main Methods:
- Analysis of charge injection mechanisms, including thermionic emission and thermally assisted tunneling.
- Investigation of factors influencing tunneling probability, such as effective mass.
- Development and application of a new approach for barrier characterization.
Main Results:
- Identified the interplay between thermionic emission and tunneling in charge injection.
- Highlighted the critical importance of effective mass in determining tunneling probability for transistor applications.
- Demonstrated a novel technique for quantifying Schottky barrier presence and height.
Conclusions:
- Schottky barriers critically influence nanotransistor switching behavior.
- Effective mass is a key parameter for controlling tunneling in transistors.
- The developed method provides a valuable tool for characterizing and optimizing nanotransistor contacts.