Elastic constants of Si crystal determined by thermal diffuse electron scattering
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Updated: Aug 17, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Renhui Wang1, Jianhua Yin, Jianian Gui
1Department of Physics and Center for Electron Microscopy, Wuhan University, Wuhan 430072, China. rhwang@whu.edu.cn
Abstract:
The method of determining elastic constants of crystals by measuring thermal diffuse X-ray scattering around some Bragg reflections, is extended to measuring thermal diffuse electron scattering for the first time, in a transmission electron microscope, equipped with a field-emission gun, an [Formula: see text] -type energy filter and a multi-scan charge-coupled device. Quantitative diffuse electron scattering in the vicinity of the [Formula: see text] Bragg reflection was measured on a Si crystal in order to obtain information about elastic constants. Values of the elastic constants ratios C(12)/C(11)=0.4246, C(44)/C(11)=0.4707 obtained by simplex fitting method are consistent with the values C(12)/C(11)=0.3856, C(44)/C(11)=0.4804 determined by other traditional methods. This method may be expected to open a new route to measuring elastic constants of polycrystalline, nanometer-scaled and composite materials.
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