Interpretation of sputter depth profiles by mixing simulations

Area of Science:

• Materials Science
• Surface Science
• Computational Physics

Background:

• Sputter depth profiling is crucial for analyzing thin film composition.
• Interpreting depth profiles is complex due to signal distortions.
• Atomic mixing and analytical method information depth are key distortion sources.

Purpose of the Study:

• To simplify the interpretation of sputter depth profiles using computer simulations.
• To differentiate and account for distortions caused by atomic mixing and information depth.
• To investigate the combined effects of atomic mixing, preferential sputtering, and Auger Electron Spectroscopy (AES) information depth.

Main Methods:

• Utilized the binary collision approximation code T-DYN for sputtering simulations.
• Developed and employed an in-house layer model for GaAs/AlAs multilayer analysis.
• Introduced a new code, LAMBDA, to incorporate AES information depth effects.

Main Results:

• Simulations successfully modeled the sputtering of a GaAs/AlAs multilayer.
• The study quantified the simultaneous impact of atomic mixing and information depth on depth profiles.
• LAMBDA code enabled investigation of AES information depth influence alongside other effects.

Conclusions:

• Computer simulations significantly aid in interpreting complex sputter depth profiles.
• Accounting for the superposition of atomic mixing and information depth is essential for accurate analysis.
• The developed methods allow for reliable determination of original elemental distributions from measured profiles.