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Effective reduction of critical current for current-induced magnetization switching by a Ru layer insertion in an

Y Jiang1, S Abe, T Ochiai

  • 1Department of Materials Science, Graduate School of Engineering, Tohoku University, and CREST, Japan Science and Technology Agency, Sendai 980-8579, Japan. elejyong@hotmail.com

Physical Review Letters
|June 1, 2004
PubMed

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