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Updated: Aug 23, 2026
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Published on: May 24, 2020
Anisotropic metal-insulator transition in epitaxial thin films
I B Altfeder1, X Liang, T Yamada
1Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA.
Abstract:
By comparing the properties of In and Pb quantum wells in a scanning tunneling microscopy subsurface imaging experiment, we found the existence of lateral bound states, a 2D Mott-Hubbard correlation gap, induced by transverse confinement. Its formation is attributed to spin or charge overscreening of quasi-2D excitations. The signature of the 2D confinement-deconfinement transition is also experimentally observed, with the correlation gap being pinned in the middle of the conduction band. A self-organized 2D Anderson lattice is suggested as a new ground state.
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